ECE Compliant L. Turn Signal Inserts for International Models. Tracer L. Thank you, request received. Thanks for visiting us at the International Motorcycle Show. We are taking orders, shipping daily, and we are here to answer your questions. We encourage the use of our online chat portal or via email, at info kuryakyn.
Any ideas? Please try the binding to see if that works ie the latest version. We spent some time recently making sure that the binding is doing the same thing as the Sigma tool, so it should also work just fine. But without success. The software asks me to initialize the exclusion procedure by pressing the button - which is impossible because I included the door lock successfully. And starting the exclusion to my mind will delete the door lock instead of the ghost knodes.
So in the next step I. Thanks for help. And you have to wait a while until the names appear. In addition, in the step b2 , the polymer beads are disposed on the upper surface of the transparent electrode layer on which the first photonic crystal pattern is formed and on the lower surface of the groove portion in a single layer, and the size of the polymer beads is adjusted.
The second photonic crystal pattern may be formed by etching the transparent electrode layer using an etch mask. In addition, the step b2 may include: b forming a trapping layer on a surface of the transparent electrode layer on which the first photonic crystal pattern is formed; b disposing the polymer beads over the trapping layer; b applying heat to the semiconductor substrate to melt the trapping layer and to immerse polymer beads located directly above the trapping layer into the molten trapping layer; b cooling the semiconductor substrate to solidify the trapping layer while the polymer beads are immersed in the trapping layer, and to remove the polymer beads disposed on the trapping layer, thereby transferring the polymer beads into a single layer.
Disposing on the transparent electrode layer; And b removing the trapping layer, adjusting the size of the polystyrene beads, and etching the transparent electrode layer by using the polymer beads having the size adjusted as an etching mask to form the second photonic crystal pattern.
It may include forming a. In addition, in the step b , it is preferable that the trapping layer is formed such that its thickness is smaller than the diameter of the polymer beads.
The present invention improves the light extraction efficiency by forming a second photonic crystal pattern inside the first photonic crystal pattern formed on the semiconductor layer or the transparent electrode layer. In addition, the present invention used a nanosphere lithography process using a polymer bead to form a nanoscale fine second photonic crystal pattern inside the first photonic crystal pattern, and a matrix formed of a thermoplastic resin to arrange the polymer beads in a single layer By simply forming the polymer beads as a single layer using a lapping layer, the inconvenience of calculating and changing process parameters according to the polymer bead size in the conventional nanosphere lithography process has been eliminated.
Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In the example illustrated in FIG. Referring to FIG. The second semiconductor layer and the transparent electrode layer are sequentially formed, and the photonic crystal pattern is formed on the upper surface of the second semiconductor layer in contact with the transparent electrode layer in two steps. In an exemplary embodiment of the present invention, the first semiconductor layer is an n-type semiconductor layer and the second semiconductor layer is a p-type semiconductor layer, but vice versa.
Since the configuration of the semiconductor substrate to the second semiconductor layer may be the same as the configuration of a general horizontal light emitting device, a detailed description thereof will be omitted and only the photonic crystal pattern, which is a feature of the present invention, will be described. A cross-sectional view of the second semiconductor layer in which the second photonic crystal pattern is formed is shown, and FIG.
The 1st photonic crystal pattern which is an uneven corrugated pattern is formed. The width of the recess constituting the first photonic crystal pattern is formed in units of several micrometers, and the number and size of the recesses formed in the second semiconductor layer can be controlled under process conditions.
Hereinafter, the surface of the second semiconductor layer is referred to as an upper surface , and the bottom surface of the recess formed from the upper surface into the second semiconductor layer is referred to as a lower surface In the example shown in FIG. In addition, it should be noted that only the first photonic crystal pattern is illustrated in FIG. Meanwhile, referring to FIGS. The pattern is formed. Accordingly, the second photonic crystal pattern having the uneven pattern is formed on the upper surface and the lower surface of the second semiconductor layer , and the photonic crystal pattern is formed in two stages of the second semiconductor layer as a whole.
It is. At this time, the width of the protrusions and formed on the upper surface and the lower surface and the interval between the protrusions and are formed in nanometer units. Thus, by forming the photonic crystal pattern in the second semiconductor layer in two steps, it is possible to improve the light extraction efficiency compared to the prior art. Meanwhile, in the above-described example, the second semiconductor layer has been described as forming a two-stage photonic crystal pattern.
However, as shown in FIG. Hereinafter, a method of manufacturing a semiconductor light emitting device having a two-stage photonic crystal pattern according to an exemplary embodiment of the present invention will be described with reference to FIGS. First, as shown in FIG. Is formed. As the additive gas, N 2 gas, O 2 gas, CO gas, or the like may also be applied.
In addition to GaInP, an etch stop layer made of, for example, AlInP may be used as the etch stop layer for dry etching. When preparing the through groove described above by the wet etching technique, the following operation is performed. For example, GaInP is used as an etching stop layer, and when etching a GaAs substrate, a sulfuric acid or phosphoric acid solution containing hydrogen peroxide water is used as an etching solution.
On the other hand, when an InP substrate is used and GaAs or the like is used as the etching stop layer, a chlorine etching solution is used. First, in order to manufacture a 1st member, as shown in FIG. The GaAs substrate corresponds to the above-described substrate having a compound semiconductor layer.
Further, a p-AlAs layer is formed thereon as a sacrificial layer at nm. Alternatively, the etch stop layer can be formed in a thickness ranging from several nm to several tens of nm. The light emitting layer has a p-type contact layer GaAs , a p-type cladding layer, a p-type active layer, an n-type cladding layer, an n-type contact layer GaAs , and an n-stop layer GaAs from the substrate side.
The n-stop layer is a layer for stopping mesa etching after the light emitting layer is transferred. A p-type active layer serving as an active layer is a p-Al 0. Both the p-type contact layer and the n-type contact layer have a thickness of nm. Further, n-type DBR layer Fig. The second member FIGS. In the bonding step FIG. Low temperature heat treatment.
When there is a drive element such as a silicon transistor under the member, it is essential to stack the members at low temperature. If the members are treated at high temperatures, impurities in the silicon device are re-diffused, increasing the likelihood that the device will not operate normally. After the bonding step, as shown in FIG. Before the resist film for dry etching is applied, it is preferable that the GaAs substrate is thinned by CMP technique or the like.
An exemplary embodiment utilizes the phenomenon that etching stops on the above-described etch stop layer InGaP when the substrate is subjected to the dry etching process described above. The AlAs layer, which is a sacrificial layer in the member, is removed by selective etching with diluted HF, and the GaAs substrate is separated from the bonded structure.
Thereafter, the light emitting layer transferred onto the silicon layer is etched into a mesa structure, as shown in FIGS. When the light emitting layer is connected with the driving circuit, the semiconductor multilayer film of Fig. Thereafter, the drive circuit can be electrically connected with the n-type DBR layer. Thus, when the member is constructed, it is not necessary to inject the carrier from the n-side electrode in the whole film thickness direction of the DBR, so that high resistance is not necessary.
Using the manufacturing method of the light emitting element which concerns on this invention, a light emitting element can be formed in an array shape on a silicon layer. The light emitting element which has an array shape can comprise the printer head of an LED printer. Although the invention has been described with reference to exemplary embodiments, it should be understood that the invention is not limited to the described exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Application No. Payment date : Year of fee payment : 4. Year of fee payment : 6. A method of manufacturing a light emitting device according to the present invention comprises the steps of: preparing a first member having a light emitting layer on a substrate having a compound semiconductor layer with an etch stop layer and a sacrificial layer interposed therebetween; Forming a laminated structure by bonding the first member on the second member including the silicon layer such that the light emitting layer is positioned inside; Etching the first member from the opposite side of the light emitting layer, thereby providing a through groove in the substrate to expose the etch stop layer; And removing the substrate provided with the through grooves from the laminated structure by etching the sacrificial layer.
It is a manufacturing method of a light emitting element, Preparing a first member having a light emitting layer on the substrate having the compound semiconductor layer with an etch stop layer and a sacrificial layer interposed therebetween; Forming a bonding structure by bonding the first member on the second member including a silicon layer such that the light emitting layer is positioned inside; Etching the first member from an opposite side of the light emitting layer, thereby providing a through groove in the substrate to expose the etch stop layer; And Removing the substrate provided with the through grooves from the bonding structure by etching the sacrificial layer.
The method of claim 1, The said 1st member has the said etching stop layer and the said sacrificial layer in this order from the said board substrate side on the board substrate which has the said compound semiconductor layer. The method of claim 1, The said 1st member is a manufacturing method of the light emitting element which has the said sacrificial layer and the said etching stop layer in this order from the said board substrate side on the board substrate which has the said compound semiconductor layer.
The method of claim 1, The substrate having the compound semiconductor layer includes a GaAs substrate, a sapphire substrate having a GaAs layer on the surface, a SiC substrate having a GaAs layer on the surface, a ZnO substrate having a GaAs layer on the surface, and a GaAs layer on the surface.
A method of manufacturing a light emitting device, comprising: a Ge substrate; and a Si substrate having a GaAs layer interposed therebetween on a Si wafer. The method of claim 4, wherein The substrate having the GaAs layer on the Si wafer with the buffer layer interposed therebetween is a substrate having a Ge layer with a SiGe layer on the Si wafer and a GaAs layer on the Ge layer.
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